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Wafer processing

Wavelength Coverage 177 - 5000nm
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Wafer processing

As a highly innovative non-contact dicing technology in the semiconductor manufacturing field, laser stealth dicing demonstrates significant advantages through its unique working principle. It focuses a high-energy laser beam on a specific depth inside the wafer material to form a modified layer. Subsequently, external force or thermal stress is applied to make the material precisely separate along the modified layer. The entire process does not involve direct contact with the material surface, thereby effectively avoiding issues such as edge chipping and material damage that may occur with traditional dicing methods. This enables micron-level or even nanometer-level precise dicing of semiconductor materials. Compared with traditional processes, the dicing efficiency is significantly improved, which can greatly shorten the production cycle.

 

Precilasers' wafer stealth dicing laser further demonstrates outstanding performance in this technical field. The laser has been deeply optimized for the physical properties and dicing requirements of different wafer materials. Currently, it has successfully achieved high-quality stealth dicing on various mainstream semiconductor wafer materials, including silicon wafers, silicon carbide (SiC) wafers, and gallium nitride (GaN) wafers. In silicon wafer dicing, it can ensure the cutting surface flatness meets extremely high standards, satisfying the stringent requirements of precision integrated circuit manufacturing. For SiC and GaN wafers with higher hardness and greater brittleness, it can also effectively control the stress distribution during the dicing process, reduce material loss, and significantly improve wafer utilization and yield, providing reliable technical support for the large-scale production of semiconductor devices.

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