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Precilasers' high-performance industrial lasers feature narrow linewidth, high power, and long lifespan. In practical wafer metrology applications, these lasers can accurately capture the microtopography of the wafer surface. Based on the laser interferometry principle, they perform high-precision nanoscale metrology of key parameters such as wafer thickness, flatness, and surface shape error. For example, in silicon wafer metrology, the thickness deviation can be controlled within ±0.1 μm, and the flatness error kept at the nanoscale—this is crucial for the precise implementation of processes like lithography and etching in subsequent chip manufacturing. For gallium nitride (GaN) and other compound semiconductor wafers, the lasers' excellent power stability enables penetration through the wafer's multi-layer structure, achieving accurate measurement of parameters such as epitaxial layer thickness and doping concentration distribution, thus providing reliable data support for the performance optimization of semiconductor devices.
Beyond their outstanding performance in standardized metrology scenarios, Precilasers deeply understands the customized wafer metrology needs of different customers. Leveraging its professional R&D team and extensive technical accumulation, we can provide customized product development solutions: whether it is adapting metrology systems to specific wafer sizes (e.g., 8-inch, 12-inch), adjusting laser parameters according to the physical properties of special materials (e.g., gallium oxide, diamond wafers), or conducting integrated optimization of metrology processes to match customers' production line automation requirements, targeted solutions are available. This comprehensively assists customers in achieving more efficient and accurate metrology control during wafer R&D and production, and safeguards the high-quality manufacturing of semiconductor devices.
